Title :
Performance and leakage optimization in carbon and fluorine co-implanted pMOSFETs
Author :
Pawlak, B.J. ; Duffy, R. ; Hooker, J.C. ; Hoffman, T. ; Felch, S.B. ; Eyben, P. ; Absil, P. ; Biesemans, S. ; Lander, R.J.P.
Author_Institution :
NXP-TSMC Res. Centre, Leuven
Abstract :
In this work we demonstrate that effective tailoring of the extension junction in MOS devices with C co-implantation must be accompanied by re-optimization of the deep HDD (HDD+) profile and spacer dimensions. In this way junction and doping profile optimization can successfully improve short channel effect (SCE) control, without penalty in performance or junction leakage.
Keywords :
MOSFET; carbon; fluorine; HDD; MOS devices; SCE control; fluorine coimplanted pMOSFET; leakage optimization; short channel effect control; spacer dimensions; Conductivity; Costs; Degradation; Doping profiles; Implants; Ion implantation; MOS devices; MOSFETs; Temperature dependence; Tunneling;
Conference_Titel :
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-1614-1
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2008.4530784
