Title :
Electro-thermal method for semiconductor power losses analysis under different modulation schemes
Author :
Ji, Baojian ; Chen, Luo-nan ; Cao, W.P. ; Zhang, M. ; Pickert, Volker
Author_Institution :
Sch. of Electr. & Electron. Eng., Newcastle Univ., Newcastle upon Tyne, UK
Abstract :
This paper presents methods for determining power loss profiles of Si-IGBT-based H-bridge inverters in motor drives. A comparison of inverter losses with commonly used PWM schemes including Bipolar and Unipolar PWMs is presented. Power losses were decomposed into switching and conduction losses to investigate their influence on the junction temperature of the IGBT. Junction temperature has been determined by an electro-thermal model and the dynamic power loss is determined based on the time-domain voltage, current and junction temperature using pre-calibrated look-up table.
Keywords :
PWM invertors; elemental semiconductors; insulated gate bipolar transistors; silicon; time-domain analysis; IGBT junction temperature; Si; bipolar PWM; conduction losses; electrothermal method; inverter loss; modulation scheme; motor drives; precalibrated look-up table; semiconductor power losses analysis; silicon-IGBT-based H-bridge inverter; switching losses; time-domain voltage; unipolar PWM; Converter; PWM; power loss; temperature control; thermal management;
Conference_Titel :
Power Electronics, Machines and Drives (PEMD 2014), 7th IET International Conference on
Conference_Location :
Manchester
Electronic_ISBN :
978-1-84919-815-8
DOI :
10.1049/cp.2014.0289
