• DocumentCode
    159307
  • Title

    The efficient deployment of silicon super-junction MOSFETs as synchronous rectifiers

  • Author

    Anthony, Philip ; McNeill, Neville

  • Author_Institution
    Electr. Energy Manage. Group, Univ. of Bristol, Bristol, UK
  • fYear
    2014
  • fDate
    8-10 April 2014
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Charge-compensated or "Super-junction" MOSFETs exhibit low on-state resistances and low switching losses. However, the reverse recovery behaviour of their intrinsic diodes and their output capacitance characteristics make their deployment as synchronous rectifiers challenging. A simple auxiliary circuit is proposed to address these issues, by reversing the direction of current flow in the MOSFET channel at turn-off, thereby deactivating the intrinsic antiparallel diode and partially charging the MOSFET output capacitance. The proposed technique is verified on a 400 V, 1 kW buck converter.
  • Keywords
    elemental semiconductors; power MOSFET; power convertors; rectifiers; silicon; auxiliary circuit; buck converter; current flow; intrinsic antiparallel diode; intrinsic diode reverse recovery; power 1 kW; silicon superjunction MOSFET; synchronous rectifiers; voltage 400 V; MOSFETs; Synchronous Rectification (SR); high efficiency; inverter;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Power Electronics, Machines and Drives (PEMD 2014), 7th IET International Conference on
  • Conference_Location
    Manchester
  • Electronic_ISBN
    978-1-84919-815-8
  • Type

    conf

  • DOI
    10.1049/cp.2014.0331
  • Filename
    6836997