Title :
The efficient deployment of silicon super-junction MOSFETs as synchronous rectifiers
Author :
Anthony, Philip ; McNeill, Neville
Author_Institution :
Electr. Energy Manage. Group, Univ. of Bristol, Bristol, UK
Abstract :
Charge-compensated or "Super-junction" MOSFETs exhibit low on-state resistances and low switching losses. However, the reverse recovery behaviour of their intrinsic diodes and their output capacitance characteristics make their deployment as synchronous rectifiers challenging. A simple auxiliary circuit is proposed to address these issues, by reversing the direction of current flow in the MOSFET channel at turn-off, thereby deactivating the intrinsic antiparallel diode and partially charging the MOSFET output capacitance. The proposed technique is verified on a 400 V, 1 kW buck converter.
Keywords :
elemental semiconductors; power MOSFET; power convertors; rectifiers; silicon; auxiliary circuit; buck converter; current flow; intrinsic antiparallel diode; intrinsic diode reverse recovery; power 1 kW; silicon superjunction MOSFET; synchronous rectifiers; voltage 400 V; MOSFETs; Synchronous Rectification (SR); high efficiency; inverter;
Conference_Titel :
Power Electronics, Machines and Drives (PEMD 2014), 7th IET International Conference on
Conference_Location :
Manchester
Electronic_ISBN :
978-1-84919-815-8
DOI :
10.1049/cp.2014.0331