Title :
Nonparabolic band structure effect on carrier transport in semiconducting graphene nanoribbons
Author :
Amin, N. Aziziah ; Johari, Zaharah ; Ahmadi, Mohammad Taghi ; Ismail, Razali ; Chek, Desmond C Y ; Ng, Eunice H X
Author_Institution :
Fac. of Electr. Eng., Univ. Teknol. Malaysia, Skudai, Malaysia
Abstract :
The band energy of graphene nanoribbon is parabolic when reaching the minimum band energy. Otherwise, it is nonparabolic. In the parabolic band structure, Fermi-Dirac integrals are employed to study the carrier statistic whereas for nonparabolic part, numerical solutions are needed. Numerical method shows Fermi energy with respect to the band edge is a function of temperature that independent of the carrier concentration in the nondegenerate regime. However, the results differ in degenerate regime. In the strongly degenerate regime, the Fermi energy is a function of carrier concentration appropriate for given dimensionality, but is independent of temperature. We also report the salient features of the saturation velocity in parabolic part of the band structure. The intrinsic velocity is found to be appropriate thermal velocity in the nondegenerate regime, increasing with the temperature, but independent of carrier concentration. Conversely in degenerate regime, this intrinsic velocity is the Fermi velocity that is independent of temperature, but depends strongly on carrier concentration.
Keywords :
Fermi level; band structure; carrier density; elemental semiconductors; fermion systems; graphene; nanostructured materials; numerical analysis; quantum statistical mechanics; C; Fermi energy; Fermi velocity; Fermi-Dirac integrals; band edge; carrier concentration; carrier statistic; carrier transport; intrinsic velocity; minimum band energy; nondegenerate regime; nonparabolic band structure effect; numerical method; numerical solutions; saturation velocity; semiconducting graphene nanoribbons; strongly degenerate regime; thermal velocity; Brillouin scattering; Charge carriers; FETs; Lattices; Nanostructures; Particle scattering; Potential well; Semiconductivity; Statistics; Temperature dependence;
Conference_Titel :
Semiconductor Electronics (ICSE), 2010 IEEE International Conference on
Conference_Location :
Melaka
Print_ISBN :
978-1-4244-6608-5
DOI :
10.1109/SMELEC.2010.5549555