Title :
High Charge Storage Characteristics of CeO2 Nanocrystals for Novolatile Memory Applications
Author :
Yang, Shao-Ming ; Huang, Jiun-Jia ; Chien, Chao-Hsin ; Taeng, Pei-Jer ; Lee, Lurng-Shehng ; Tsai, Ming-Jinn ; Lei, Tan-Fu
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu
Abstract :
This paper presents the formation of CeO2 nanocrystals on SiO2 tunneling layer and its annealing effect to the nonvolatile memory device. The characteristics including the program/erase behaviors, data retention, and endurance of Silicon-Oxide-Nitride-Oxide-Silicon type memories embedded with cerium oxide (CeO2) nanocrystals were studied to demonstrate its advantages as a nonvolatile memory device.
Keywords :
annealing; cerium compounds; nanostructured materials; random-access storage; silicon compounds; tunnelling; CeO2; SiO2; annealing effect; data retention; high charge storage characteristics; nanocrystals; nonvolatile memory applications; nonvolatile memory device; program/erase behaviors; silicon-oxide-nitride-oxide-silicon type memories; tunneling layer; Annealing; Cerium; Electron traps; High K dielectric materials; High-K gate dielectrics; Industrial electronics; Nanocrystals; Nonvolatile memory; Tunneling; Voltage;
Conference_Titel :
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-1614-1
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2008.4530792
