Title :
Tunnel Oxide Dipole Engineering in TANOS Flash Memory for Fast Programming with Good Retention and Endurance
Author :
Tan, Y.N. ; Wen, H.-C. ; Park, C. ; Gilmer, D.C. ; Young, C.D. ; Heh, D. ; Sivasubramani, P. ; Huang, J. ; Majhi, P. ; Kirsch, P.D. ; Lee, B.H. ; Tseng, H.-H. ; Jammy, R.
Author_Institution :
SEMATECH, Austin, TX
Abstract :
Band engineering in TANOS (TaN-Al2O3-Si3N4-SiO2-Silicon) Flash memory utilizing an interfacial dipole is demonstrated for the first time. A dipole layer at the tunnel oxide/charge storage layer interface leads to increase in programming speed while maintaining good retention and endurance. Using a dipole layer results in a 40% increase in Va, shift at program voltage Vg-Vfb, = 11 V. The performance improvement by dipole incorporation into the TANOS stack is discussed.
Keywords :
aluminium compounds; elemental semiconductors; flash memories; silicon; silicon compounds; tantalum compounds; Flash memory; TaN-Al2O3-Si3N4-SiO2-Si; dipole layer; interfacial dipole; program voltage; programming speed; tunnel oxide-charge storage layer; Batteries; Channel bank filters; Electrons; Flash memory; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Lead compounds; Silicon compounds; Voltage;
Conference_Titel :
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-1614-1
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2008.4530795
