A High Performance and Scalable FinFET BE-SONOS Device for NAND Flash Memory Application

A high-performance body tied FinFET BE-SONOS device is demonstrated, suitable for NAND Flash memory scaling beyond 30 nm technology node. BE-SONOS offers efficient hole tunneling erase and excellent data retention. When integrated into a FinFET structure, a much higher program/erase speed is obtained, owing to the inherent field enhancement (FE) effect around the fin tip. In this work, a very scaled (36 nm) FinFET BE-SONOS with successful NAND array functions, including fast block erase speed (<2 msec to V_T < -IV), moderate incremental-step-pulse programming (ISPP) slope (>0.6), successful self-boosting program-inhibit window, good read disturb property (>100 K read), and excellent cycling endurance (>10 K) are demonstrated.