Title :
Light-emitting SiGe heterostructures with self-assembled islands for optical interconnection in the wavelength range of 1.3–2.1 μm
Author :
Novikov, A.V. ; Tonkikh, A.A. ; Yurasov, D.V. ; Antonov, A.A. ; Baydakova, N.A. ; Kudryavtsev, K.E. ; Shaleev, M.V. ; Lobanov, D.N. ; Krasilnik, Z.F.
Author_Institution :
Inst. for Phys. of Microstruct., Nizhny Novgorod, Russia
Abstract :
The paper is devoted to the study of formation and luminescent properties of light-emitting structures with Ge(Si) self-assembled islands grown on Si(001), SOI and relaxed SiGe/Si(001) buffers.
Keywords :
light emitting diodes; optical interconnections; optical materials; photoluminescence; self-assembly; silicon compounds; silicon-on-insulator; Ge(Si) self-assembled islands; SOI; SiGe-Si; light-emitting SiGe heterostructures; light-emitting structures; luminescent properties; optical interconnection; relaxed SiGe/Si(001) buffers; wavelength 1.3 mum to 2.1 mum; Charge carrier processes; Light emitting diodes; Optical buffering; Photodetectors; Silicon; Silicon germanium;
Conference_Titel :
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4799-2282-6
DOI :
10.1109/Group4.2014.6961971
