Title :
Landscape of Combinatorial Materials Exploration and High Throughput Characterizations for the Post-CMOS Devices
Author :
Chikyow, T. ; Ohmori, K. ; Nagata, T. ; Umezawa, N. ; Haemori, M. ; Yoshitake, Masahiro ; Hasegawa, T. ; Koinuma, H. ; Yamada, K.
Author_Institution :
Nat. Inst. for Mater. Sci., Tsukuba
Abstract :
A combinatorial synthesis and high throughput characterization was employed to accelerate the new materials exploration. Also tow basic guide lines were shown to design the future nano CMOS. They are amorphous structure and defect control. As examples, we examined a HfO2-Y2O3-Al2O3 ternary oxide for gate oxide and Pt-W, Ru-Mo amorphous metals for metal gate. Moreover, C-incorporation is effective to obtain metal electrodes with a smaller grain size, which would be required for ultimate short-channel MIS-FET devices in 32-22 nm node and beyond to suppress variability of electric properties as well.
Keywords :
CMOS integrated circuits; aluminium compounds; amorphous semiconductors; hafnium compounds; nanoelectronics; yttrium compounds; C-incorporation; HfO2-Y2O3-Al2O3; Pt-W; Ru-Mo; amorphous metals; amorphous structure; combinatorial materials exploration; combinatorial synthesis; defect control; electric properties; gate oxide; grain size; metal electrodes; metal gate; nano CMOS; post-CMOS devices; size 32 nm to 22 nm; ternary oxide; ultimate short-channel MIS-FET devices; Alloying; Dielectric constant; Dielectric materials; Fluctuations; High K dielectric materials; Inorganic materials; Large scale integration; Optical materials; Probes; Throughput;
Conference_Titel :
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-1614-1
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2008.4530801
