• DocumentCode
    1593435
  • Title

    Carbon nanotube field effect transistor measurements in vacuum

  • Author

    Yahya, Iskandar ; Stolojan, V. ; Clowes, Steven ; Mustaza, S.M. ; Silva, S.R.P.

  • fYear
    2010
  • Firstpage
    224
  • Lastpage
    228
  • Abstract
    Three terminal measurements on a carbon nanotube field effect transistor (CNTFET) were carried out in high vacuum and the ambient, and its performance compared. The on-off current ratio, ION/IOFF, were 102 and 105 for devices operated in high vacuum and in ambient air, respectively. Here, we show that the conversion of p-type to ambipolar behavior may largely be attributed to the O2 in ambient doping the single walled carbon nanotubes (SWCNTs) in the active channel which consists of bundles of SWCNTs. Switching behaviour of these devices, with respect to constituent types of SWCNTs in the bundles will be discussed.
  • Keywords
    carbon nanotubes; field effect transistors; ambient doping; ambipolar behavior; carbon nanotube field effect transistor measurement; on-off current ratio; p-type; single walled carbon nanotubes; three terminal measurement; vacuum; CNTFETs; Carbon nanotubes; Chemical processes; Chemical vapor deposition; Doping; Electric breakdown; FETs; Fabrication; Semiconductivity; Semiconductor device breakdown;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics (ICSE), 2010 IEEE International Conference on
  • Conference_Location
    Melaka
  • Print_ISBN
    978-1-4244-6608-5
  • Type

    conf

  • DOI
    10.1109/SMELEC.2010.5549562
  • Filename
    5549562
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1593435