Title :
Progress and Future of Carbon-Based Electronics
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY
Abstract :
In the last few decades, the semiconductor industry has been able to maintain steady improvements of device performance by the scaling of silicon-based devices. However, this approach will soon meet both scientific and technical limits, and there have been tremendous efforts to seek alternative device technologies. Some approaches involve moving away from traditional charge-based electronics, such as spin-based transport or nano-mechanical switches. Another approach maintains the operating principle of current technology with the emphasis on new materials that provide superior performance. In this respect, carbon-based nanomaterials, including one-dimensional carbon nanotubes and two-dimensional graphene, are probably the most promising candidate[Ph. Avouris et al. (2007)].
Keywords :
carbon nanotubes; nanostructured materials; semiconductor device manufacture; silicon; 1D carbon nanotubes; 2D graphene; carbon based electronics; carbon based nanomaterials; device performance; semiconductor industry; silicon based devices; Carbon nanotubes; Circuits; Impedance measurement; MOSFETs; Nanoscale devices; Ring oscillators; Schottky barriers; Semiconductivity; Voltage; Voltage-controlled oscillators;
Conference_Titel :
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-1614-1
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2008.4530805