DocumentCode :
159348
Title :
Reabsorption effects on direct band gap emission from germanium light emitting diodes
Author :
Yen-Yu Chen ; Chia-Chun Yen ; Yi-Hsin Nien ; Wen-Wei Hsu ; Qing-Qi Chen ; Liu, C.W.
fYear :
2014
fDate :
27-29 Aug. 2014
Firstpage :
179
Lastpage :
180
Abstract :
The lateral current flow in the lateral light emitting diode can confine carrier distribution near the top surface, and thus relatively stronger direct band gap emission is observed.
Keywords :
elemental semiconductors; germanium; integrated optoelectronics; light emitting diodes; Ge; carrier distribution confinement; direct band gap emission; germanium light emitting diodes; lateral current flow; reabsorption effects; Current density; Electrodes; Laser excitation; Light emitting diodes; Metals; Photonic band gap; Photonics; light emitting diodes; reabsorption effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4799-2282-6
Type :
conf
DOI :
10.1109/Group4.2014.6961978
Filename :
6961978
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=159348
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