Title :
Simulations of Ge based optically controlled field effect transistors
Author :
Rajamani, S. ; Sorianello, V. ; De Iacovo, Andrea ; Colace, Lorenzo
Author_Institution :
Dept. of Eng., Univ. Roma Tre, Rome, Italy
Abstract :
We report on the simulation of Optically Controlled Field Effect Transistors (OCFET) based on a MOSFET with a Germanium gate. We study the static and dynamic characteristics of the device under near infrared light at 1.55 μm and investigate its operation as a digital inverter.
Keywords :
MOSFET; elemental semiconductors; field effect transistors; germanium; infrared spectra; optical control; optical interconnections; photodetectors; phototransistors; Ge; MOSFET; digital inverter; germanium gate based OCFET; near infrared light; optically controlled field effect transistors; wavelength 1.55 mum; Doping; Inverters; Logic gates; Optical pulses; Optical receivers; Optical saturation; Optical sensors; optical interconnects; optically controlled transistor; photodetectors; phototransistors;
Conference_Titel :
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4799-2282-6
DOI :
10.1109/Group4.2014.6961989
