DocumentCode
159369
Title
Simulations of Ge based optically controlled field effect transistors
Author
Rajamani, S. ; Sorianello, V. ; De Iacovo, Andrea ; Colace, Lorenzo
Author_Institution
Dept. of Eng., Univ. Roma Tre, Rome, Italy
fYear
2014
fDate
27-29 Aug. 2014
Firstpage
199
Lastpage
200
Abstract
We report on the simulation of Optically Controlled Field Effect Transistors (OCFET) based on a MOSFET with a Germanium gate. We study the static and dynamic characteristics of the device under near infrared light at 1.55 μm and investigate its operation as a digital inverter.
Keywords
MOSFET; elemental semiconductors; field effect transistors; germanium; infrared spectra; optical control; optical interconnections; photodetectors; phototransistors; Ge; MOSFET; digital inverter; germanium gate based OCFET; near infrared light; optically controlled field effect transistors; wavelength 1.55 mum; Doping; Inverters; Logic gates; Optical pulses; Optical receivers; Optical saturation; Optical sensors; optical interconnects; optically controlled transistor; photodetectors; phototransistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location
Paris
Print_ISBN
978-1-4799-2282-6
Type
conf
DOI
10.1109/Group4.2014.6961989
Filename
6961989
Link To Document