Title :
Modulation depth enhancement in Si quantum dot doped SiOx waveguide based free-carrier modulator by adding a ring resonator
Author :
Sheng-Pin Su ; Chung-Lun Wu ; Gong-Ru Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The Si quantum dot doped SiOx waveguide based free-carrier absorption modulator with enhanced modulation depth from 52.5% to 63.5% is demonstrated by adding a ring resonator and inducing the electron-hole plasma to cause a resonance shift in the ring.
Keywords :
elemental semiconductors; optical modulation; optical resonators; optical waveguides; semiconductor quantum dots; silicon; silicon compounds; solid-state plasma; SiOx:Si; electron-hole plasma; modulation depth enhancement; quantum dot doped waveguide based free-carrier absorption modulator; resonance shift; ring resonator; Absorption; Modulation; Optical ring resonators; Optical waveguides; Probes; Silicon; Waveguide lasers;
Conference_Titel :
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4799-2282-6
DOI :
10.1109/Group4.2014.6961990
