Title :
Recent advancement in high voltage power devices and ICs; Challenges to achieve silicon limit characteristics
Author_Institution :
Semicond. Co., Toshiba Corp., Kawasaki
Abstract :
Power devices are considered to be one of the keys for solving the global warming. The present paper briefly summarizes the recent advancement in IGBTs, power MOSFETs and SOI/BiCD power ICs. It is often cited that power devices are facing the silicon limit. The present paper also makes clear where the limit of each power device exists and how to achieve the silicon limit characteristics.
Keywords :
insulated gate bipolar transistors; power MOSFET; power integrated circuits; IGBT; global warming; high voltage power devices; insulated gate bipolar transistors; power MOSFET; power integrated circuits; silicon limit characteristics; Bipolar transistors; Current density; Electrons; Global warming; Impedance; Insulated gate bipolar transistors; MOSFETs; Power integrated circuits; Silicon; Voltage;
Conference_Titel :
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-1614-1
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2008.4530819
