• DocumentCode
    1593777
  • Title

    Mobile Charge Induced Breakdown Instability in 700V LDMOSFET

  • Author

    Huang, Tsung-Yi ; Chiang, P.Y. ; Huang, C.C. ; Huang, P.C. ; Huo, K.H. ; Su, R.Y. ; Shih, J.R. ; Chen, Fu Hsin ; Chen, Clair ; Chen, Ken ; Chien, C.C. ; Hsu, S.L. ; Liu, Mingo ; Gong, J. ; Tsai, Chun-Lin

  • Author_Institution
    Taiwan Semicond. Manuf. Co., Hsinchu
  • fYear
    2008
  • Firstpage
    105
  • Lastpage
    108
  • Abstract
    One chip solution for SMPS (switch mode power supply) has been drawing great attention of the designers with its green mode standby power and high efficiency in the AC-DC adaptor and LED lighting applications. The UHV (ultra-high voltage) foundry process, which enables the integration solution for green compliance SMPS, is proposed in this paper. The technology integrated low voltage CMOS (5 V), medium voltage (40 V) and UHV (700 V) devices in one single process. The UHV technology provides a novel UHV device structure with RESURF (Reduce-SURface-Field) effect to sustain ultra-high breakdown voltage and not to affect the original low/medium voltage devices performance in the same time. Thus, the concept of this novel structure is easily to apply to the other technology nodes and extend its voltage-sustaining range by adjusting the drift length for the RESURF structure. In this research, the 700 V technology has realized the performance that the BVdss (breakdown voltage) is 800 V with Ronsp (on-resistance) of 270 mOhm-cm2. In the same time, the process challenge to optimize 700 V device performance against un-balanced mobile charge issue was also discussed.
  • Keywords
    CMOS integrated circuits; circuit stability; electric potential; power MOSFET; semiconductor device breakdown; surface charging; switched mode power supplies; LDMOSFET; RESURF effect; drift length; extended voltage-sustaining range; green compliance SMPS; integrated UHV voltage CMOS devices; mobile charge induced breakdown instability; reduce-surface-field effect; switch mode power supply; ultra-high breakdown voltage; voltage 40 V; voltage 5 V; voltage 700 V; CMOS technology; Electric breakdown; Emergency power supplies; Foundries; LED lamps; Light emitting diodes; Low voltage; Medium voltage; Switched-mode power supply; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-1614-1
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2008.4530820
  • Filename
    4530820