Title :
A new MOSFET & IGBT gate drive insulated by a piezoelectric transformer
Author :
Vasic, Dejan ; Costa, François ; Sarraute, Emmanuel
Author_Institution :
Ecole Normale Superieure de Cachan, France
fDate :
6/23/1905 12:00:00 AM
Abstract :
In this paper, a new gate drive for MOSFET´S and IGBT´S is presented based on the use of a piezoelectric transformer. The characterisation of the transformer and the analysis of the energy transferred to the grid of the transistor are achieved in order to determine the optimal physical structure of the transformer. Satisfactory results have been obtained in driving a 6A/100V/10kHz chopper
Keywords :
bipolar transistor switches; choppers (circuits); driver circuits; field effect transistor switches; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; power semiconductor switches; transformers; 10 kHz; 100 V; 6 A; IGBT gate drive; MOSFET gate drive; chopper; energy transfer analysis; piezoelectric transformer; transformer characterisation; transistor grid; Demodulation; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Power transformer insulation; Pulse modulation; Pulse transformers; Resonant frequency; Switches; Vibrations;
Conference_Titel :
Power Electronics Specialists Conference, 2001. PESC. 2001 IEEE 32nd Annual
Conference_Location :
Vancouver, BC
Print_ISBN :
0-7803-7067-8
DOI :
10.1109/PESC.2001.954328
