DocumentCode :
1594001
Title :
Realization of Silicon-Germanium-Tin (SiGeSn) Source/Drain Stressors by Sn implant and Solid Phase Epitaxy for strain engineering in SiGe channel P-MOSFETs
Author :
Wang, Grace Huiqi ; Toh, Eng-Huat ; Chan, Taw Kuei ; Osipowicz, Thomas ; Foo, Yong-Lim ; Chih Hang Tung ; Guo-Qiang Lo ; Samudra, Ganesh ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore
fYear :
2008
Firstpage :
128
Lastpage :
129
Abstract :
We report the first demonstration of silicon-germanium-tin (SiGeSn) source and drain (S/D) stressors formed by Sn implant and solid-phase epitaxy (SPE). SPE was developed to achieve high levels of Sn substitutionality in SiGe S/D, to induce compressive strain in the channel. No recess etch or epi deposition steps were required, leading to minimal incremental process cost. SiGeSn S/D can be easily integrated in a standard CMOS process. Sub-50 nm p- FETs were fabricated. With a substitutional Sn concentration of 6.6% in SiGe S/D, having an equivalent lattice constant to that of Si0.4Ge0.6, enhancement of IDsat and hole mobility (muhole) are 48% and 88% respectively, over p-FETs without Sn implant. With the demonstration of SiGeSn S/D stressors, we provide a technology extension to SiGe S/D technology for further p-FET enhancement.
Keywords :
CMOS integrated circuits; Ge-Si alloys; MOSFET; compressive strength; hole mobility; ion implantation; semiconductor epitaxial layers; solid phase epitaxial growth; CMOS process; SiGeSn; compressive strain; hole mobility; lattice constant; p-FET enhancement; p-MOSFET; silicon-germanium-tin source-drain stressors; solid phase epitaxy; strain engineering; substitutional tin concentration; Capacitive sensors; Costs; Epitaxial growth; Etching; Germanium silicon alloys; Implants; MOSFET circuits; Silicon germanium; Solids; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
Conference_Location :
Hsinchu
ISSN :
1524-766X
Print_ISBN :
978-1-4244-1614-1
Electronic_ISBN :
1524-766X
Type :
conf
DOI :
10.1109/VTSA.2008.4530830
Filename :
4530830
Link To Document :
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