Title :
Strain engineering for direct bandgap GeSn alloys
Author :
Wirths, Stephan ; Stange, Daniela ; Geiger, Richard ; Ikonic, Zoran ; Stoica, Toma ; Mussler, Gregor ; Hartmann, J.-M. ; Sigg, Hans ; Grutzmacher, D. ; Mantl, Siegfried ; Buca, Dan
Author_Institution :
Peter Grunberg Inst., Forschungszentrum Juelich, Julich, Germany
Abstract :
The growth and characterization, including band structure and gain calculations, of strain engineered (Si)GeSn/GeSn heterostructures with large Sn content are presented and discussed in the view of the realization of a direct band gap semiconductor.
Keywords :
band structure; germanium compounds; semiconductor growth; semiconductor heterojunctions; semiconductor materials; silicon compounds; GeSn-GeSn; SiSn-GeSn; band structure; direct band gap semiconductor; strain engineered heterostructure; Optical buffering; Photonic band gap; Stimulated emission; Tensile strain; Tin; Bandgap Engineering; Chemical Vapor Deposition; Germanium-Tin; Group IV Alloys; Laser Materials; Photo-luminescence; Strain Relaxation; Tensile Strained GeSn;
Conference_Titel :
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4799-2282-6
DOI :
10.1109/Group4.2014.6962004
