• DocumentCode
    1594171
  • Title

    RESET-Enhancing Features for Via-Heated Phase-Change Memory Cells

  • Author

    Chen, F.T. ; Yeh, J.-T. ; Chao, Der-Sheng ; Chen, M.-J. ; Yen, P. ; Lee, C.-M. ; Chen, J.-W. ; Chen, W.-S. ; Kao, M.-J. ; Tsai, M.J.

  • Author_Institution
    EOL/Ind. Technol. Res. Inst., Hsinchu
  • fYear
    2008
  • Firstpage
    138
  • Lastpage
    139
  • Abstract
    The various means of improving the performance of phase-change memory cells are reviewed. Simulation predictions are compared with experimental results. Emphasis is placed on RESET current reduction by considering the balance between Joule heating input and heat loss to surroundings. For a given via design rule, the double-confined structure gives the best overall performance to date. We attribute this to the low thermal conductivity of the phase-change material.
  • Keywords
    phase change materials; random-access storage; RESET-enhancing features; low thermal conductivity; phase-change material; via-heated phase-change memory cells; Chaos; Conducting materials; Dielectric losses; Electrodes; Heating; Inorganic materials; Phase change memory; Plugs; Predictive models; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-1614-1
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2008.4530835
  • Filename
    4530835
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1594171