Title :
Temporal Changes of Parameters in Phase Change Memory
Author :
Karpov, I. ; Mitra, M. ; Kau, D. ; Spadini, G. ; Kryukov, Y.A. ; Karpov, V.
Author_Institution :
Intel Corp., Santa Clara, CA
Abstract :
We have presented the data showing the drift of PCM parameters over a broad range of times. We have proposed a simple analytical model to explain our observations through inherent structural relaxations in a glass and described by the double well potential concept that predicts the temporal and saturation dependencies of drift phenomena. Our model correctly describes the observed drift including the numerical values of parameters.
Keywords :
chalcogenide glasses; phase change materials; semiconductor storage; double well potential concept; drift phenomena; phase change memory; saturation dependency; structural relaxation; temporal dependency; Dynamic programming; Electric resistance; Electrical resistance measurement; Extraterrestrial measurements; Glass; Phase change materials; Phase change memory; Temperature; Thermal conductivity; Voltage;
Conference_Titel :
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-1614-1
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2008.4530836
