Title :
Infrared photodetectors fabricated on 3D epitaxial Ge-on-Si
Author :
Frigerio, Jacopo ; Isa, F. ; Ghisetti, E. ; Isella, Giovanni ; Miglio, L.
Author_Institution :
Phys. Dept., Politec. di Milano, Como, Italy
Abstract :
We present an infrared photodetector obtained by depositing Ge on patterned silicon substrates. The patterning prevents thermal cracks formation allowing for the deposition of several micrometer thick Ge layers, exhibiting strong absorption at the indirect gap (λ=1.88 μm).
Keywords :
elemental semiconductors; germanium; infrared detectors; optical fabrication; photodetectors; semiconductor epitaxial layers; thin film sensors; 3D epitaxial Ge-on-Si; Ge-Si; Si; absorption; indirect gap; infrared photodetector; patterned silicon substrates; wavelength 1.88 mum; Absorption; Optical device fabrication; Photodiodes; Silicon; Substrates; Three-dimensional displays;
Conference_Titel :
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4799-2282-6
DOI :
10.1109/Group4.2014.6962020
