• DocumentCode
    1594295
  • Title

    Sub-nanometer EOT scaling on In0.53Ga0.47As with atomic layer deposited HfO2 as gate dielectric

  • Author

    Lee, K.Y. ; Chang, P. ; Chang, Y.C. ; Huang, M.L. ; Lee, Y.J. ; Hong, M. ; Kwo, J.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu
  • fYear
    2008
  • Firstpage
    150
  • Lastpage
    151
  • Abstract
    In this paper the scalability of ALD HfO2 in passivating high indium content InGaAs were studied. A capacitance equivalent thickness (CET) of 1.0 nm has been achieved in this work without any surface pretreated process.
  • Keywords
    III-V semiconductors; atomic layer deposition; gallium arsenide; hafnium compounds; indium compounds; monolithic integrated circuits; passivation; scaling circuits; HfO2; In0.53Ga0.47As; atomic layer deposition; capacitance equivalent thickness; gate dielectric; size 1.0 nm; sub nanometer EOT scaling; Argon; CMOS technology; Capacitance-voltage characteristics; Diodes; Gallium arsenide; Gold; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Indium gallium arsenide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-1614-1
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2008.4530841
  • Filename
    4530841
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1594295