Title :
High speed energy-efficient germanium electro-absorption modulator featuring monolithic integration with germanium p-i-n photodetector
Author :
Lim, A.E.-J. ; Liow, T.-Y. ; Fang, Q. ; Duan, N. ; Ding, L. ; Yu, M. ; Lo, G.-Q. ; Kwong, D.-L.
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
Abstract :
We report a novel evanescent-coupled germanium electro-absorption modulator with a small active area of 16 μm2 giving an extinction ratio of ~dB for a wavelength range of 1580-1610 nm. In addition, monolithic integration of both evanescent-coupled Ge electro-absorption modulator and Ge p-i-n photodetector is demonstrated for the first time.
Keywords :
electro-optical modulation; electroabsorption; energy conservation; germanium; integrated optics; p-i-n diodes; photodetectors; extinction ratio; germanium electroabsorption modulator; germanium p-i-n photodetector; high speed energy efficient modulator; monolithic integration; wavelength 1580 nm to 1610 nm; Absorption; Optical fibers; Optical modulation; PIN photodiodes; Silicon;
Conference_Titel :
Optical Fiber Communication Conference and Exposition (OFC/NFOEC), 2011 and the National Fiber Optic Engineers Conference
Conference_Location :
Los Angeles, CA
Print_ISBN :
978-1-4577-0213-6
