Title :
Gate First Band Edge High-k/Metal Stacks with EOT=0.74nm for 22nm Node nFETs
Author :
Huang, J. ; Kirsch, P.D. ; Hussain, M. ; Heh, D. ; Sivasubramani, P. ; Young, C. ; Gilmer, D.C. ; Park, C.S. ; Tan, Y.N. ; Park, C. ; Harris, H.R. ; Majhi, P. ; Bersuker, G. ; Lee, B.H. ; Tseng, H.-H. ; Jammy, R.
Author_Institution :
SEMATECH, Austin, TX
Abstract :
We demonstrate for the first time a gate first high-k/metal gate (MG) nFET with EOT = 0.74 nm (Tinv = 1.15 nm), low Vt = 0.30 V, high performance [Ion/IOff = 1310(muA/um) at 100(nA/um)], low leakage (> 200x reduction vs. SiO2/PolySi) and good PBTI. Low-k interface layer scaling and high-k La-doping enable this desirable EOT and Vt. SiON/HfLaSiON can give similar interface quality as SiO2/HfSiON. Device performance was further improved 5% by strain engineering.
Keywords :
doping; field effect transistors; hafnium compounds; lanthanum compounds; silicon compounds; SiON-HfLaSiON; gate first band edge high-k/metal stacks; high-k La-doping; low leakage reduction; low-k interface layer; strain engineering; Annealing; Capacitive sensors; Degradation; Doping; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Plasma sources; Plasma stability; Plasma temperature;
Conference_Titel :
VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-1614-1
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2008.4530842
