Title :
TMAHW etchants for silicon micromachining
Author :
Schnakenberg, U. ; Benecke, W. ; Lange, P.
Author_Institution :
Fraunhofer-Inst. fur Mikrostrukturtech., Berlin, Germany
Abstract :
Etching solutions based on tetramethyl ammonium hydroxide and water (TMAHW) are proposed for etching monocrystalline silicon. The nature of TMAHW solutions is discussed with respect to anisotropy, selectivity, and IC-process compatibility. At a solution temperature of 80 degrees C and 2 wt.% TMAH, a maximum
Keywords :
elemental semiconductors; etching; integrated circuit technology; micromechanical devices; semiconductor technology; silicon; 80 C; Al metallisation; Al-Si; IC-process compatibility; Si micromachining; anisotropy; aqueous solutions; elemental semiconductor; etch rate; pH value; selectivity; tetramethyl ammonium hydroxide; Aluminum oxide; Anisotropic magnetoresistance; Etching; Metallization; Micromachining; Protection; Rough surfaces; Silicon; Surface roughness; Temperature;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.149008
