• DocumentCode
    159446
  • Title

    Electroluminescent diodes in n-doped germanium with Schottky contacts

  • Author

    Prost, M. ; El Kurdi, M. ; Ghrib, A. ; Checoury, X. ; Zerounian, N. ; Aniel, F. ; Beaudoin, G. ; Sagnes, I. ; Boeuf, F. ; Boucaud, P.

  • Author_Institution
    Inst. d´Electron. Fondamentale, Univ. Paris Sud 11, Orsay, France
  • fYear
    2014
  • fDate
    27-29 Aug. 2014
  • Firstpage
    53
  • Lastpage
    54
  • Abstract
    We demonstrate room temperature electroluminescence with Schottky contacts on n-doped germanium. We show that the electrical response and electroluminescence can be optimized by inserting a thin Al2O3 layer prior to contact formation.
  • Keywords
    Schottky barriers; Schottky diodes; aluminium compounds; electrical conductivity; electroluminescence; electroluminescent devices; elemental semiconductors; germanium; Al2O3-Ge; Schottky contacts; electrical response; electroluminescent diodes; n-doped germanium; room temperature electroluminescence; temperature 293 K to 298 K; thin layer; Aluminum oxide; Electroluminescence; Gallium arsenide; Germanium; Schottky barriers; Schottky diodes; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4799-2282-6
  • Type

    conf

  • DOI
    10.1109/Group4.2014.6962046
  • Filename
    6962046
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=159446