Title :
Electroluminescent diodes in n-doped germanium with Schottky contacts
Author :
Prost, M. ; El Kurdi, M. ; Ghrib, A. ; Checoury, X. ; Zerounian, N. ; Aniel, F. ; Beaudoin, G. ; Sagnes, I. ; Boeuf, F. ; Boucaud, P.
Author_Institution :
Inst. d´Electron. Fondamentale, Univ. Paris Sud 11, Orsay, France
Abstract :
We demonstrate room temperature electroluminescence with Schottky contacts on n-doped germanium. We show that the electrical response and electroluminescence can be optimized by inserting a thin Al2O3 layer prior to contact formation.
Keywords :
Schottky barriers; Schottky diodes; aluminium compounds; electrical conductivity; electroluminescence; electroluminescent devices; elemental semiconductors; germanium; Al2O3-Ge; Schottky contacts; electrical response; electroluminescent diodes; n-doped germanium; room temperature electroluminescence; temperature 293 K to 298 K; thin layer; Aluminum oxide; Electroluminescence; Gallium arsenide; Germanium; Schottky barriers; Schottky diodes; Temperature measurement;
Conference_Titel :
Group IV Photonics (GFP), 2014 IEEE 11th International Conference on
Conference_Location :
Paris
Print_ISBN :
978-1-4799-2282-6
DOI :
10.1109/Group4.2014.6962046
