Understanding Strain Effects on Double-Gate FinFET Drive-Current Enhancement, Hot-Carrier Reliability and Ring-Oscillator Delay Performance via Uniaxial Wafer Bending Experiments

Author

Suthram, Sagar ; Harris, H.R. ; Hussain, M.M. ; Smith, C. ; Young, C.D. ; Yang, J.W. ; Mathews, K. ; Freeman, K. ; Majhi, P. ; Tseng, H.H.-H. ; Jammy, R. ; Thompson, Scott E.

Author_Institution

SEMATECH Intern, Univ. of Florida, Gainesville, FL

fYear

2008

Firstpage

163

Lastpage

164

Abstract

Strain induced drive current enhancement on double-gate (DG) FinFETs from contact etch stop liners (CESLs) is modeled by performing wafer bending experiments. Longitudinal piezoresistance co-efficients for DG - FinFETs are extracted and shown to be different from the bulk Si values. This understanding is further used to gain insight into strain effects on FinFET ring-oscillator (RO) delay performance. FinFET hot- carrier degradation is observed to be enhanced for both tension and compression, and is explained to be due to increased impact- ionization from strain induced bandgap narrowing at the drain- body junction.

Keywords

MOSFET; bending; etching; hot carriers; impact ionisation; oscillators; piezoresistance; semiconductor device models; semiconductor device reliability; contact etch stop liners; double-gate FinFET; drain- body junction; drive-current enhancement; hot-carrier reliability; impact- ionization; longitudinal piezoresistance co-efficient; ring-oscillator delay; strain effects; uniaxial wafer bending; Capacitive sensors; Delay effects; Etching; FinFETs; Hot carrier effects; Hot carriers; Performance gain; Piezoresistance; Semiconductor device modeling; Uniaxial strain;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-1614-1

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2008.4530848

Filename

4530848