• DocumentCode
    1594488
  • Title

    Statistical Compact Modeling of Variations in Nano MOSFETs

  • Author

    Lin, Chung-Hsun ; Dunga, Mohan V. ; Lu, Darsen ; Niknejad, Ali M. ; Hu, Chenming

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA
  • fYear
    2008
  • Firstpage
    165
  • Lastpage
    166
  • Abstract
    We present a methodology to generate performance-aware corner models--PAM. Accuracy is improved by emphasizing electrical variation data and reconciling the process and electrical variation data. PAM supports corner (plusmnsigma and plusmn2sigma) simulation and MC simulation. Furthermore, PAM supports application-specific corner cards, for example, for gain sensitive applications.
  • Keywords
    MOSFET; Monte Carlo methods; SPICE; nanoelectronics; semiconductor device models; statistical analysis; Monte Carlo simulation; PAM; SPICE MC simulation; application-specific corner cards; electrical variation data; nano MOSFET; performance-aware corner models; statistical compact modeling; 1f noise; CMOS technology; Circuit simulation; Computational modeling; Delay; Fabrics; MOSFETs; Resource description framework; SPICE; Semiconductor process modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems and Applications, 2008. VLSI-TSA 2008. International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1524-766X
  • Print_ISBN
    978-1-4244-1614-1
  • Electronic_ISBN
    1524-766X
  • Type

    conf

  • DOI
    10.1109/VTSA.2008.4530849
  • Filename
    4530849
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1594488