Title :
Monolithic 180 nm CMOS Dosimeter for In Vivo Medical Applications
Author :
Villani, E.G. ; Gabrielli, A. ; Khan, Ajmal ; Pikhay, Evgeny ; Roizin, Y. ; Zhang, Zhenhao
Author_Institution :
STFC, Rutherford Appleton Lab., Didcot, UK
Abstract :
The design and development of a monolithic system-on-chip silicon device for real time measurement of radiation dose is described. The device is fabricated in a standard 180 nm CMOS technology. The proposed application is in the medical field of In Vivo Dosimetry, where the dose of radiation, delivered to patients during radiotherapy sessions, is monitored in real time by an in-body implanted device of 1 mm3 approximate size and the related information is transmitted wirelessly to an external receiver operating in the Medical Implant Communication Service (MICS) band. Along with standard electrical characterization, evaluation of device performance is carried out under radiation beam in a clinical environment. The design and initial test results of the first phase of the project, covering the radiation sensors, will be discussed. A description of the next project steps will also be given.
Keywords :
CMOS integrated circuits; bioelectric phenomena; biomedical equipment; dosimetry; elemental semiconductors; patient monitoring; prosthetics; radiation therapy; silicon; system-on-chip; CMOS technology; clinical environment; device performance evaluation; external receiver; implanted device; in vivo dosimetry; in vivo medical applications; medical implant communication service band; monolithic CMOS dosimeter; monolithic system-on-chip silicon device; radiation beam; radiation dose; radiation sensors; radiotherapy; real time measurement; real time monitoring; size 180 nm; standard electrical characterization; CMOS integrated circuits; Capacitors; Logic gates; Sensitivity; Sensors; Standards; Threshold voltage; Floating gate; In Vivo dosimetry; MICS; NVM;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2013.2251472
