Title :
Design centering of a GaN photonic crystal nanobeam
Author :
Pugh, Jonathan R. ; Cryan, Martin J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Bristol, Bristol, UK
Abstract :
It is well known that structures containing photonic crystal cavities produce cavity modes with extremely large Q-factors. This type of structure can be hyper sensitive to both design and manufacturing processes. Each parameter, be it structural or material will have a tolerance associated with it and the purpose of design centering is to obtain a final design that will achieve the highest yield while maintaining, not the maximum cavity Q factor available, but a value close to it. In this paper, we show how the cavity Q-factor of a photonic crystal nanobeam varies with some structural parameters using both two and three dimensional Lumerical FDTD s1.
Keywords :
III-V semiconductors; Q-factor; finite difference time-domain analysis; gallium compounds; manufacturing processes; nanostructured materials; photonic crystals; voids (solid); wide band gap semiconductors; GaN; GaN photonic crystal nanobeam; cavity modes; design centering; manufacturing process; maximum cavity Q factor; photonic crystal cavities; photonic crystal nanobeam; structural parameters; three dimensional Lumerical FDTD s1; Cavity resonators; Computational modeling; Finite difference methods; Mirrors; Photonic crystals; Q-factor; Time-domain analysis;
Conference_Titel :
Transparent Optical Networks (ICTON), 2015 17th International Conference on
Conference_Location :
Budapest
DOI :
10.1109/ICTON.2015.7193675
