Title :
Band anticrossing and luminescence emission in dilute InAs1−x−yNxSby quaternary alloys
Author :
Oriaku, Chijioke I. ; Pereira, Mauro F.
Author_Institution :
Mater. & Eng. Res. Inst., Sheffield Hallam Univ., Sheffield, UK
Abstract :
In this paper, we calculate the luminescence of the dilute quaternary InAs1-x-yNxSby semiconductor using a microscopic approach. The theory starts with the band anticrossing model applied to both conduction and the valence band to generate input for analytical approximations that lead to luminescence spectra, including relevant many body effects. Direct application of the equations leads to good agreement with recently measured experimental data.
Keywords :
III-V semiconductors; arsenic compounds; conduction bands; indium compounds; many-body problems; nitrogen compounds; photoluminescence; valence bands; InAs1-x-yNxSby; band anticrossing model; conduction band; dilute quaternary semiconductor; luminescence emission spectra; many body effects; valence band; Luminescence; Mathematical model; Metals; Molecular beam epitaxial growth; Nitrogen; Photonic band gap; Quantum cascade lasers; InAs1−x−yNxSby dilute semiconductor; band anticrossing models; luminescence; many-body effects;
Conference_Titel :
Transparent Optical Networks (ICTON), 2015 17th International Conference on
Conference_Location :
Budapest
DOI :
10.1109/ICTON.2015.7193677
