Title :
Nonuniform 2D Mott-Gurney law
Author :
Zhu, Y.B. ; Ang, L.K.
Author_Institution :
Eng. Product Dev., Singapore Univ. of Technol. & Design, Singapore, Singapore
Abstract :
For high charge injection into a solid dielectric, the 1D current density is described by the classical Mott-Gurney (MG) law for trap-free solid and Mark-Helfrich (HF) law for trap-filled solid. Recently, due to the development of nanotechnology, the geometry current enhancement is observed in many experiment, such as electron transport in nanowire. In this paper, we develop a numerical method to solved the 2D space charge limited current problem.
Keywords :
Poisson equation; cathodes; charge injection; current density; nonlinear equations; numerical analysis; space charge; 1D current density; 2D current enhancement; 2D space charge limited current problem; Mark-Helfrich law; SOR method; cathode surface; charge injection; classical 2D Mott-Gurney law; edge effect; electron transport; geometry current enhancement; nanotechnology; nanowire; nonlinear Poisson equation; numerical method; scaling law; solid dielectric; trap-filled solid; trap-free solid; Current density; Dielectrics; Educational institutions; Electron traps; Hafnium; Product development; Solids;
Conference_Titel :
Plasma Science (ICOPS), 2013 Abstracts IEEE International Conference on
Conference_Location :
San Francisco, CA
DOI :
10.1109/PLASMA.2013.6634947
