Title :
High performance Ge/Si avalanche photodiodes development in intel
Author :
Kang, Y. ; Huang, Z. ; Saado, Y. ; Campbell, J. ; Pauchard, A. ; Bowers, J. ; Paniccia, M.J.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
Ge/Si avalanche photodiodes with record high gain-bandwidth and sensitivity for communication wavelength and high data rate, 10Gbps and 40Gbps, is demonstrated. These devices can be monolithically integrated with other silicon photonics components using CMOS technology.
Keywords :
CMOS integrated circuits; Ge-Si alloys; avalanche photodiodes; integrated optics; CMOS technology; Ge-Si; Intel; avalanche photodiodes development; bit rate 10 Gbit/s; bit rate 40 Gbit/s; communication wavelength; gain-bandwidth; silicon photonics components; Avalanche photodiodes; Bandwidth; Optical waveguides; Receivers; Sensitivity; Silicon;
Conference_Titel :
Optical Fiber Communication Conference and Exposition (OFC/NFOEC), 2011 and the National Fiber Optic Engineers Conference
Conference_Location :
Los Angeles, CA
Print_ISBN :
978-1-4577-0213-6
