Title :
Current Reduction of CdZnTe via Band Gap Engineering
Author :
Voss, L.F. ; Conway, A.M. ; Nelson, A.J. ; Beck, P.R. ; Graff, R.T. ; Nikolic, R.J. ; Payne, Stephen A. ; Burger, A. ; Chen, Huanting
Author_Institution :
Lawrence Livermore Nat. Lab., Livermore, CA, USA
Abstract :
CdZnTe-based gamma detectors require a reduction of electronic noise contributed by apparent device and surface leakage current, especially for advanced readout schemes such as the Co-planar Grid or Pixelated Grid. In this work, we describe a combination of surface treatments and amorphous semiconductor layers that result in a reduction of both apparent device and surface leakage current compared to metal contacts on Br:MeOH etched devices. Characterization by scanning electron microscopy (SEM), spectroscopic ellipsometry (SE), x-ray photoelectron spectroscopy (XPS), current-voltage (IV), and pulse height spectra is performed.
Keywords :
II-VI semiconductors; X-ray photoelectron spectra; amorphous semiconductors; cadmium compounds; ellipsometry; energy gap; gamma-ray detection; leakage currents; scanning electron microscopy; semiconductor device noise; surface conductivity; surface treatment; zinc compounds; CdZnTe; IV characteristics; SEM; X-ray photoelectron spectroscopy; XPS; amorphous semiconductor layers; apparent device; band gap engineering; current reduction; current-voltage characteristics; electronic noise reduction; gamma detectors; pulse height spectra; readout schemes; scanning electron microscopy; spectroscopic ellipsometry; surface leakage current; surface treatment; Crystals; Detectors; Leakage currents; Photonic band gap; Plasmas; Semiconductor device measurement; Surface treatment; Amorphous semiconductors; CdZnTe; gamma spectroscopy; radiation detection;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2013.2247629
