Title :
Progress in high-responsivity vertical-illumination type Ge-on-Si photodetecor operating at λ ∼1.55 µm
Author :
Joo, Jiho ; Kim, Sanghoon ; Kim, In Gyoo ; Jang, Ki-Seok ; Kim, Gyungock
Author_Institution :
Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
We present a vertical-illumination-type 100% Ge-on-Si photodetector with the responsivity up to 0.93 A/W at λ~1.55 μm. The 10Gbps photoreceiver with a fabricated 60 μm-diameter device exhibits high sensitivity of -19.5 dBm for λ~1.55 μm.
Keywords :
germanium; integrated optics; optical fabrication; optical receivers; photodetectors; Ge-Si; Ge-on-Si photodetector; bit rate 10 Gbit/s; high-responsivity vertical-illumination photodetector; photoreceivers; size 60 mum; wavelength 1.55 mum; Current measurement; Optical imaging; Optical receivers; Photodetectors; Semiconductor device measurement; Sensitivity; Silicon;
Conference_Titel :
Optical Fiber Communication Conference and Exposition (OFC/NFOEC), 2011 and the National Fiber Optic Engineers Conference
Conference_Location :
Los Angeles, CA
Print_ISBN :
978-1-4577-0213-6
