DocumentCode
1595923
Title
Metrology for nanosystems and nanoelectronics reliability assessments
Author
Obeng, Yaw S. ; Okoro, Chukwudi A. ; Kopanski, Joseph J.
Author_Institution
Semicond. & Dimensional Metrol. Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fYear
2012
Firstpage
1
Lastpage
5
Abstract
The traditional models and techniques for studying reliability in integrated circuits may not be appropriate for nanoelectronics and nanosystems. In this paper, we present an overview of a number of materials and metrology techniques currently under development in our group at NIST. Among other topics, we will assess the techniques and models currently used for evaluating integrated circuit reliability, as well as present some new approaches.
Keywords
measurement; nanoelectronics; reliability; three-dimensional integrated circuits; integrated circuit reliability; metrology technique; nanoelectronics reliability assessment; nanosystem reliability assessment; three-dimensional integrated circuit; Capacitors; Image resolution; Materials; Materials reliability; CBCM; TSVs; charge based capacitance measurement; interconnects; metrology techniques; nanoelectronics; reliability; three-dimensional integrated circuits; through silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location
Birmingham
ISSN
1944-9399
Print_ISBN
978-1-4673-2198-3
Type
conf
DOI
10.1109/NANO.2012.6321886
Filename
6321886
Link To Document