Title :
Switching loss of 600 V Gen-1 and Gen-2 P-MCTs in soft-switching circuits
Author :
Yang, Eric ; Temple, Vic ; Arthur, Steve
Author_Institution :
Power Res. & Dev., Harris Semicond., Latham, NY, USA
Abstract :
This paper characterizes switching losses of 600 V generation-1 and generation-2 P-MCT (MOS controlled thyristors) devices. These devices, packaged in TO-218 and TO-247, are rated at 75 A for continuous current at 90°C case temperature. By operating the MCTs in soft switching fashion, the turn-on and the turn-off losses can be greatly reduced or eliminated. In such circuits dissipation in the MCTs is dominated by conduction loss which is low and close to power diodes with the similar ratings. To assist practical circuit design, this paper presents test results for several possible soft switching operations of the MCTs. The surge current capability of the MCTs is also demonstrated
Keywords :
MOS-controlled thyristors; power convertors; power semiconductor switches; surges; switching circuits; thyristor convertors; 600 V; 75 A; 90 C; MOS controlled thyristors; P-MCT; circuit design; conduction loss; continuous current; power converters; soft-switching circuits; surge current capability; switching losses; turn-off losses; turn-on losses; zero current switching; zero voltage switching; Character generation; Circuit synthesis; Circuit testing; Diodes; Packaging; Surges; Switching circuits; Switching loss; Temperature; Thyristors;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1995. APEC '95. Conference Proceedings 1995., Tenth Annual
Conference_Location :
Dallas, TX
Print_ISBN :
0-7803-2482-X
DOI :
10.1109/APEC.1995.469104
