The effect of a shielding layer on breakdown voltage in a trench gate IGBT

Author

Lee, Jong-Seok ; Shin, Ho-Hyun ; Lee, Han-Sin ; Sung, Man Young ; Kang, Ey-Goo

Author_Institution

Dept. of Electr. Eng., Korea Univ., Seoul

fYear

2007

Firstpage

62

Lastpage

65

Abstract

In this paper we introduced the shielding layer concept in order to alleviate the electric field of concentrated on the trench bottom corner. The shielded trench gate IGBT is a trench gate IGBT with a P+ shielding layer bottom of a trench gate. By simulation results, we verified that a shielding layer reduced the electric fields not only in the gate oxide but in the p-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved.

Keywords

electric breakdown; insulated gate bipolar transistors; power bipolar transistors; P+ shielding layer bottom; electric field; forward breakdown voltages; insulated gate bipolar transistors; shielded trench gate IGBT; shielding layer effect; Anisotropic magnetoresistance; Breakdown voltage; Circuits; Etching; Implants; Information technology; Insulated gate bipolar transistors; Ion implantation; Low voltage; Power electronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics, 2007. ICPE '07. 7th Internatonal Conference on

Conference_Location

Daegu

Print_ISBN

978-1-4244-1871-8

Electronic_ISBN

978-1-4244-1872-5

Type

conf

DOI

10.1109/ICPE.2007.4692349

Filename

4692349