Title :
The effect of a shielding layer on breakdown voltage in a trench gate IGBT
Author :
Lee, Jong-Seok ; Shin, Ho-Hyun ; Lee, Han-Sin ; Sung, Man Young ; Kang, Ey-Goo
Author_Institution :
Dept. of Electr. Eng., Korea Univ., Seoul
Abstract :
In this paper we introduced the shielding layer concept in order to alleviate the electric field of concentrated on the trench bottom corner. The shielded trench gate IGBT is a trench gate IGBT with a P+ shielding layer bottom of a trench gate. By simulation results, we verified that a shielding layer reduced the electric fields not only in the gate oxide but in the p-base region. Compared with conventional trench gate IGBT, about 33% increment of forward breakdown voltages are achieved.
Keywords :
electric breakdown; insulated gate bipolar transistors; power bipolar transistors; P+ shielding layer bottom; electric field; forward breakdown voltages; insulated gate bipolar transistors; shielded trench gate IGBT; shielding layer effect; Anisotropic magnetoresistance; Breakdown voltage; Circuits; Etching; Implants; Information technology; Insulated gate bipolar transistors; Ion implantation; Low voltage; Power electronics;
Conference_Titel :
Power Electronics, 2007. ICPE '07. 7th Internatonal Conference on
Conference_Location :
Daegu
Print_ISBN :
978-1-4244-1871-8
Electronic_ISBN :
978-1-4244-1872-5
DOI :
10.1109/ICPE.2007.4692349
