Si-based hetero-material-gate tunnel field effect transistor: Analytical model and simulation

Author

Cui, Ning ; Liang, Renrong ; Wang, Jing ; Xu, Jun

Author_Institution

Tsinghua Univ., Beijing, China

fYear

2012

Firstpage

1

Lastpage

5

Abstract

In this paper, we present an analytical model of silicon-based hetero-material-gate (HMG) tunnel field effect transistor (TFET). This model includes the calculation of electric potential, electric field and band-to-band tunneling rate. Electrical characteristics of the HMG TFET can be accurately described by this model. The electrical behavior of the HMG TFET obtained by the analytical model is compared with the numerical simulation results, and shows excellent agreement. It is demonstrated that the HMG TFET has superior electrical performance than single-material-gate TFET.

Keywords

electric fields; electric potential; elemental semiconductors; field effect transistors; numerical analysis; silicon; tunnel transistors; tunnelling; HMG TFET; Si; band-to-band tunneling rate; electric field; electric potential; electrical behavior; electrical characteristics; electrical performance; numerical simulation; silicon-based hetero-material-gate tunnel field effect transistor; single-material-gate TFET; Analytical models; Computational modeling; High K dielectric materials; Numerical models; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on

Conference_Location

Birmingham

ISSN

1944-9399

Print_ISBN

978-1-4673-2198-3

Type

conf

DOI

10.1109/NANO.2012.6321906

Filename

6321906