DocumentCode :
1596451
Title :
Novel three-terminal photosensitive thyristors and optically-controlled gates
Author :
Zhu Chang-Chun ; Kang Xue-Jun ; Lui Jun-Hua
Author_Institution :
Dept. of Electron. Eng., Xi´´an Jiaotong Univ., Shaanxi, China
fYear :
1991
Firstpage :
844
Lastpage :
847
Abstract :
Novel dual-intercontrolled photosensitive thyristors based on the lateral interaction effect between two current-controlled negative resistance switches with a metal/insulator (tunnel)/n-p/sup +/ semiconductor (MINP) four-layer structure have been developed. The thyristor consists of two MIS switches. Their electrical and optical characteristics and fabrication process are reported. These devices have been further developed to be optically controlled AND/OR gates.<>
Keywords :
logic gates; metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; photodetectors; semiconductor switches; thyristor applications; thyristors; AND/OR gates; MINP; MIS switches; current-controlled negative resistance switches; dual controlled thyristors; electrical characteristics; fabrication; four-layer structure; lateral interaction effect; metal-insulator-n/p semiconductor structure; optical characteristics; optically-controlled gates; three-terminal photosensitive thyristors; Circuit testing; Conductivity; Epitaxial layers; Optical control; Optical device fabrication; Optical sensors; Substrates; Switches; Thyristors; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
Type :
conf
DOI :
10.1109/SENSOR.1991.149016
Filename :
149016
Link To Document :
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