DocumentCode
1596470
Title
Investigation on hot carrier effects in n-type short-channel junctionless nanowire transistors
Author
Park, Chan-Hoon ; Ko, Myung-Dong ; Kim, Ki-Hyun ; Lee, Jeong-Soo ; Jeong, Yoon-Ha
Author_Institution
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
fYear
2012
Firstpage
1
Lastpage
4
Abstract
Hot carrier induced degradation of the n-type junctionless nanowire transistor (JNT) and the inversion-mode NWFET (IMNT) has been experimentally compared. The JNT shows better hot carrier (HC) immunity than the IMNT. The lateral peak electrical field intensity is lower in the JNT than the IMNT, which is observed by TCAD simulation work.
Keywords
field effect transistors; hot carriers; nanowires; technology CAD (electronics); IMNT; TCAD simulation; hot carrier effect; hot carrier immunity; hot carrier induced degradation; inversion-mode NWFET; lateral peak electrical field intensity; n-type short-channel junctionless nanowire transistor; Capacitance-voltage characteristics; Degradation; Human computer interaction; Logic gates; Transistors; 10-years lifetime; Nanowire; hot carrier; junctionless; transistor;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location
Birmingham
ISSN
1944-9399
Print_ISBN
978-1-4673-2198-3
Type
conf
DOI
10.1109/NANO.2012.6321907
Filename
6321907
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