Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator

Author

McNutt, T. ; Hefner, Allen ; Mantooth, A. ; Duliere, J. ; Berning, D. ; Singh, R.

Author_Institution

Arkansas Univ., Fayetteville, AR, USA

Volume

4

fYear

2001

fDate

6/23/1905 12:00:00 AM

Firstpage

2103

Abstract

Dynamic compact electrothermal models are developed for silicon carbide (SiC) power diodes. Model parameters are extracted and model results are presented for both 1500 V SiC Merged PiN Schottky and 5000 V SiC PiN diodes. The models are verified for on-state characteristics, temperature dependence and reverse recovery characteristics, di/dt, dv/dt, and temperature dependence

Keywords

Schottky diodes; circuit simulation; p-i-n diodes; power semiconductor diodes; semiconductor device models; semiconductor materials; silicon compounds; 1500 V; 5000 V; Saber circuit simulator; SiC; SiC PiN Schottky power diode model; SiC merged PiN Schottky power diode model; computer simulation; di/dt; dv/dt; dynamic compact electrothermal models; on-state characteristics; reverse recovery characteristics; temperature dependence; Circuit simulation; Electric breakdown; Electrothermal effects; Libraries; NIST; Schottky diodes; Semiconductor diodes; Silicon carbide; Silicon devices; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 2001. PESC. 2001 IEEE 32nd Annual

Conference_Location

Vancouver, BC

ISSN

0275-9306

Print_ISBN

0-7803-7067-8

Type

conf

DOI

10.1109/PESC.2001.954431

Filename

954431