Title :
Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulator
Author :
McNutt, T. ; Hefner, Allen ; Mantooth, A. ; Duliere, J. ; Berning, D. ; Singh, R.
Author_Institution :
Arkansas Univ., Fayetteville, AR, USA
fDate :
6/23/1905 12:00:00 AM
Abstract :
Dynamic compact electrothermal models are developed for silicon carbide (SiC) power diodes. Model parameters are extracted and model results are presented for both 1500 V SiC Merged PiN Schottky and 5000 V SiC PiN diodes. The models are verified for on-state characteristics, temperature dependence and reverse recovery characteristics, di/dt, dv/dt, and temperature dependence
Keywords :
Schottky diodes; circuit simulation; p-i-n diodes; power semiconductor diodes; semiconductor device models; semiconductor materials; silicon compounds; 1500 V; 5000 V; Saber circuit simulator; SiC; SiC PiN Schottky power diode model; SiC merged PiN Schottky power diode model; computer simulation; di/dt; dv/dt; dynamic compact electrothermal models; on-state characteristics; reverse recovery characteristics; temperature dependence; Circuit simulation; Electric breakdown; Electrothermal effects; Libraries; NIST; Schottky diodes; Semiconductor diodes; Silicon carbide; Silicon devices; Temperature dependence;
Conference_Titel :
Power Electronics Specialists Conference, 2001. PESC. 2001 IEEE 32nd Annual
Conference_Location :
Vancouver, BC
Print_ISBN :
0-7803-7067-8
DOI :
10.1109/PESC.2001.954431
