Title :
Physical MOSFET´s model for analog circuit design: application to current copier based architectures
Author :
Robilliart, Etienne ; Dubois, Emmanuel
Author_Institution :
Avenue Poincare, Cite Sci., Villeneuve d´´Ascq, France
Abstract :
A one-dimensional numerical MOSFET model suitable for fast transient analysis of analog as well as digital circuits is presented. This model, based on a fast resolution of the Poisson and current continuity equations is continuous over all region of operation, from weak to strong inversion. Moreover, this modeling approach implicitly takes into account the non-quasi-static nature of the charge dynamics. This last feature proved to be very useful for the simulation of current copier based circuits that are strongly affected by charge injection effects. Systematic comparisons are given between this model, BSIM3 and two-dimensional (2D) simulations for basic and cascoded current copier cells
Keywords :
MOSFET; analogue integrated circuits; circuit CAD; circuit analysis computing; integrated circuit modelling; semiconductor device models; transient analysis; ELDO; Poisson equation; analog circuit design; cascoded current copier cells; charge dynamics; charge injection effects; current continuity equation; current copier based architectures; digital circuits; fast transient analysis; numerical MOSFET model; one-dimensional MOSFET model; physical MOSFET model; Analog circuits; Analog-digital conversion; Charge carrier processes; Circuit simulation; Digital circuits; Ear; Electronic mail; MOSFET circuits; Numerical models; Transient analysis;
Conference_Titel :
Circuits and Systems, 1996. ISCAS '96., Connecting the World., 1996 IEEE International Symposium on
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-3073-0
DOI :
10.1109/ISCAS.1996.542128
