DocumentCode :
1596794
Title :
An active gate drive circuit for high power inverter system to reduce turn-off spike voltage of IGBT
Author :
Kim, Jin-Hong ; Park, Dong-Hyun ; Kim, Jeong-Bin ; Kwon, Bong-Hyun
Author_Institution :
Central R&D Center, LS Ind. Syst. Co., Ltd., Anyang
fYear :
2007
Firstpage :
127
Lastpage :
131
Abstract :
This paper presents a new gate drive method for high power IGBT to reduce the turn-off spike voltage which is appeared between collector and emitter. In the power circuit of inverter, there is a commutation loop stray inductance between the dc-link capacitors and IGBTs. It affects the turn-off spike voltage of IGBT. In general, snubber circuits are used to control the spike voltage but they are consists of passive components result in the limitation to reduce the spike voltage. In this paper, a new active method is proposed and based on the saturation voltage characteristics of IGBT which is related with collector current and collector-emitter voltage. In order to reduce the spike voltage, gate current is controlled in the active region during the turn-off. The proposed method is implemented with 220 kW inverter and verified by the experimental results.
Keywords :
electric current control; insulated gate bipolar transistors; invertors; active gate drive circuit; collector current voltage; collector-emitter voltage; commutation loop stray inductance; high power IGBT; high power inverter system; power 220 kW; power circuit; turn-off spike voltage reduction; Capacitors; Circuits; Electronics industry; Inductance; Insulated gate bipolar transistors; Inverters; Leg; Power electronics; Snubbers; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics, 2007. ICPE '07. 7th Internatonal Conference on
Conference_Location :
Daegu
Print_ISBN :
978-1-4244-1871-8
Electronic_ISBN :
978-1-4244-1872-5
Type :
conf
DOI :
10.1109/ICPE.2007.4692362
Filename :
4692362
Link To Document :
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