Title :
Poly flanked VDMOS (PFVDMOS): a superior technology for superjunction devices
Author :
Gan, K.P. ; Liang, Yung C. ; Samudra, Ganesh S. ; Xu, S.M. ; Yong, Liu
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
fDate :
6/23/1905 12:00:00 AM
Abstract :
A novel VDMOS structure, named poly flanked VDMOS (PFVDMOS), is proposed for the first time to provide a better performance and process technology for superjunction MOSFET devices. The structure contains a thin oxide barrier to eliminate the existing p-n lateral interdiffusion problem, thus both the n-epi and p poly column widths can be reduced to a minimum. This reduction in column width enables the device to have a much higher n-epi doping concentration. In a sense, it leads to an optimal reduction in on-state resistance compared to other existing structures for the same voltage rating
Keywords :
chemical interdiffusion; p-n junctions; power MOSFET; semiconductor doping; n-epi column width; n-epi doping concentration; on-state resistance optimal reduction; p poly column width; p-n lateral interdiffusion problem; poly flanked VDMOS; process technology; superjunction MOSFET devices; thin oxide barrier; Anisotropic magnetoresistance; Doping; Etching; Gallium nitride; Implants; MOSFET circuits; Microelectronics; Neodymium; Silicon; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 2001. PESC. 2001 IEEE 32nd Annual
Conference_Location :
Vancouver, BC
Print_ISBN :
0-7803-7067-8
DOI :
10.1109/PESC.2001.954439
