Title :
A basic IGBT model with easy parameter extraction
Author :
Lauritzen, Peter O. ; Andersen, Gert K. ; Helsper, Martin
Author_Institution :
Washington Univ., Seattle, WA, USA
fDate :
6/23/1905 12:00:00 AM
Abstract :
Simple parameter extraction is the goal of a new basic IGBT model designed for use by application engineers. The model has good accuracy yet its parameters can be quickly extracted from three standard measurements or from data sheets
Keywords :
insulated gate bipolar transistors; semiconductor device models; application engineers; basic IGBT model; data sheets; parameters extraction; standard measurements; Circuit simulation; Data mining; Design engineering; Insulated gate bipolar transistors; Libraries; Parameter extraction; Power electronics; Power engineering and energy; Power semiconductor devices; Process design;
Conference_Titel :
Power Electronics Specialists Conference, 2001. PESC. 2001 IEEE 32nd Annual
Conference_Location :
Vancouver, BC
Print_ISBN :
0-7803-7067-8
DOI :
10.1109/PESC.2001.954440
