Title :
Circuit simulator models for the diode and IGBT with full temperature dependent features
Author :
Palmer, P.R. ; Joyce, J.C. ; Eng, P.Y. ; Hudgins, J. ; Santi, E. ; Dougal, R.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fDate :
6/23/1905 12:00:00 AM
Abstract :
The problems faced in generating analytical models for the IGBT and power diode are devising correct equations and determining realistic boundary conditions, especially for 2D features, while ensuring convergence of the models. These issues are addressed in this paper in relation to the temperature dependent modelling of IGBTs and diodes
Keywords :
SPICE; circuit simulation; insulated gate bipolar transistors; power semiconductor diodes; semiconductor device models; 2D features; IGBT; PSPICE implementation; circuit simulator models; diode; distributed charge simulation; models convergence; realistic boundary conditions; temperature dependent modelling; Analytical models; Boundary conditions; Charge carrier processes; Circuit simulation; Computational modeling; Equations; Insulated gate bipolar transistors; Semiconductor diodes; Spontaneous emission; Temperature dependence;
Conference_Titel :
Power Electronics Specialists Conference, 2001. PESC. 2001 IEEE 32nd Annual
Conference_Location :
Vancouver, BC
Print_ISBN :
0-7803-7067-8
DOI :
10.1109/PESC.2001.954442
