• DocumentCode
    1596936
  • Title

    High frequency hydrogen-terminated diamond field effect transistor technology

  • Author

    Moran, David A J ; Russell, Stephen A O ; Sharabi, Salah ; Tallaire, Alexandre

  • Author_Institution
    Univ. of Glasgow, Glasgow, UK
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    We report on the fabrication and characterization of 120 nm and 50nm gate length hydrogen-terminated diamond field effect transistors. DC operation and performance Reduction of gate length from 120 nm to 50 nm is found to increase the extrinsic cut-off frequency (fT) from 43 GHz to 53 GHz. We believe this to be the highest cut-off frequency yet reported for a diamond based transistor.
  • Keywords
    diamond; hydrogen; millimetre wave field effect transistors; DC operation; frequency 43 GHz; frequency 53 GHz; hydrogen-terminated diamond field effect transistor technology; performance reduction; size 120 nm; size 50 nm; Diamond-like carbon; FETs; Gold; Logic gates; Performance evaluation; Resistance; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
  • Conference_Location
    Birmingham
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4673-2198-3
  • Type

    conf

  • DOI
    10.1109/NANO.2012.6321925
  • Filename
    6321925
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1596936