Title :
Direct growth of high-quality mono-layer graphene on insulating substrate by advanced plasma CVD
Author :
Kato, Toshiaki ; Hatakeyama, Rikizo
Author_Institution :
Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
Abstract :
A transfer-free method for growing carrier-density controlled graphene directly on a SiO2 substrate has been realized for the first time by plasma chemical vapor deposition (CVD). Using this method, high-quality single-layer graphene sheets can be selectively grown between a Ni film and the SiO2 substrate. Systematic investigations reveal that the relatively thin Ni layer and plasma CVD are critical to the success of this unique method of graphene growth.
Keywords :
graphene; monolayers; plasma CVD; C; Ni film; SiO2; advanced plasma chemical vapor deposition; carrier-density controlled graphene; direct growth; graphene growth method; high-quality monolayer graphene; high-quality single-layer graphene sheets; insulating substrate; selective growth; silica substrate; thin Ni layer; transfer-free method; Carbon; Films; Hydrocarbons; Nickel; Plasmas; Substrates; Graphene; direct growth; plasma CVD;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-4673-2198-3
DOI :
10.1109/NANO.2012.6321934
