• DocumentCode
    1597208
  • Title

    Direct growth of high-quality mono-layer graphene on insulating substrate by advanced plasma CVD

  • Author

    Kato, Toshiaki ; Hatakeyama, Rikizo

  • Author_Institution
    Dept. of Electron. Eng., Tohoku Univ., Sendai, Japan
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A transfer-free method for growing carrier-density controlled graphene directly on a SiO2 substrate has been realized for the first time by plasma chemical vapor deposition (CVD). Using this method, high-quality single-layer graphene sheets can be selectively grown between a Ni film and the SiO2 substrate. Systematic investigations reveal that the relatively thin Ni layer and plasma CVD are critical to the success of this unique method of graphene growth.
  • Keywords
    graphene; monolayers; plasma CVD; C; Ni film; SiO2; advanced plasma chemical vapor deposition; carrier-density controlled graphene; direct growth; graphene growth method; high-quality monolayer graphene; high-quality single-layer graphene sheets; insulating substrate; selective growth; silica substrate; thin Ni layer; transfer-free method; Carbon; Films; Hydrocarbons; Nickel; Plasmas; Substrates; Graphene; direct growth; plasma CVD;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
  • Conference_Location
    Birmingham
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4673-2198-3
  • Type

    conf

  • DOI
    10.1109/NANO.2012.6321934
  • Filename
    6321934
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1597208